Abstract
Threshold ionization mass spectrometry (TIMS) has been used to measure the excited molecular oxygen states O2 (1Δg) and during plasma-assisted chemical vapour deposition of tin oxide (SnO2) thin films. The latter, composed of nanosized features, was deposited by feeding in a mixture of Ar, O2 and tetramethyltin (Sn(CH3)4 or TMT) in a capacitively coupled RF discharge reactor. Langmuir probe measurements were performed along with TIMS to measure the electron temperature and density. The correlations between these two diagnostic methods have been investigated. The observed densities of O2 (1Δg) and in the γ mode of the discharge are maximum at a low electron temperature and high density. Furthermore, these results have been shown to be correlated to the trend of the electronic conductivity of the deposited SnO2 thin films.
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