Abstract

The effect of external optical feedback (EOF) on the threshold gain of the single quantum well blue InGaN laser diode (LD) has numerically been investigated. Simulation results indicated that the amplitude and phase of EOF have potential effects on the threshold gain of InGaN LD. The effect of gain compression factor on the threshold gain of InGaN LD with and without EOF is also investigated. Lower threshold gain obtained with higher amplitude of EOF; while higher threshold gain obtained with lower gain compression factor.

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