Abstract
We calculate the height of the average surface potential barrier for the incorporation of various reactive species (hydrogen and silicon atoms, SiH 2, SiH 3 and SiH 4) in films of hydrogenated amorphous silicon deposited by glow discharge decomposition of silanes. A local amorphous configuration for the surface is constructed through a representative cluster (Si 29H 10) containing rings of five, six or seven silicon atoms. Pairwise superposition of interatomic potentials is assumed for the interaction of the molecular complex and the surface. An estimate of the dissociative force along Si-H bonds is also presented as a function of the distance from the surface.
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