Abstract
Buffered hydrofluoric acid treatments with different hydrogen fluoride (HF) concentrations have been performed on KTaO3 (100) substrates to study their effects on field-effect characteristics. The threshold gate electric fields for carrier accumulation in KTaO3 field-effect transistors with parylene gate insulator were found to decrease reproducibly after the buffered HF (BHF) treatments. It is shown that this threshold shift reflects a resistivity change near the surface of KTaO3 substrates caused by the surface treatments, which we attribute to the creation of shallow donor states in the near surface region of KTaO3. These results suggest that a wet process can be a useful tool to control the performance of field-effect devices based on transition-metal oxides.
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