Abstract
Semiconductor spintronics has been the subject of intensive experimental and theoretical investigations aimed at realizing devices which can outperform their charge-based counterparts. The spin-polarized vertical-cavity surface-emitting laser (spin-VCSEL) promises a number of advantages over a conventional VCSEL and has potential applications in cryptographic communications and reconfigurable optical interconnects. Here we report the first demonstration of a threshold current reduction in a spin-polarized vertical-cavity surface- emitting laser (spin-VCSEL) through electrical injection of spin-polarized electrons
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