Abstract
The theoretical study on the threshold current density (Jth) of InxGa1−xAs/InGaAsP quantum well (QW) lasers lattice matched to GaAs is presented. The results are also compared with those of InxGa1−xAs/GaAs QW lasers. For relatively long cavity length (≳1000 μm), two lasers have similar values of the Jth for x<0.25, in particular, for the wavelength of 0.98 μm. On the other hand, for x≳0.25, InGaAs/InGaAsP lasers show lower values of the Jth than InGaAs/GaAs lasers for all cavity lengths. The results indicate that InGaAs/InGaAsP lasers are expected as a promising light source for optoelectronic applications.
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