Abstract
The authors consider the transparency carrier density in ideal and practical strained layer In/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure lasers. The transparency carrier density in practical structures is then related to transparency current density using realistic values for spontaneous recombination rates. These parameters are incorporated with representative structural parameters into a nonlinear model for gain in a quantum-well laser, in order to provide a complete model for the laser threshold current density in strained layer In/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure lasers. These results are then compared and contrasted with experimental laser results from several laboratories. >
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