Abstract
We theoretically investigate the threshold current density for spin-orbit-torque- (SOT) induced perpendicular magnetization switching. According to the relative sign of fieldlike torque (FLT) and dampinglike torque (DLT), we derive the corresponding analytical formulas of the threshold current density ${J}_{\mathrm{th}}$ required to switch magnetization from equilibrium states to nearly in-plane states. These formulas, which agree well with numerical results among a wide range of material parameters, indicate that SOT current density can be significantly reduced in the presence of a large FLT. The conditions are then explored to achieve complete magnetization reversal after removing the SOT currents. When the ratio of FLT to DLT \ensuremath{\eta} is negative in our sign convention, we find that SOT pulses with long enough fall time, for example, 0.2 ns in our simulations, can guarantee stable switching. In contrast, a small in-plane magnetic field or a large damping is necessary when \ensuremath{\eta} g 0. Based on the conditions, the measured threshold current densities in several reported experiments, which deviate from previous models, can be well reproduced by our derived ${J}_{\mathrm{th}}$. We further study the possible incubation delay induced by SOT, clarifying the recent contradiction on incubation time during SOT switching. Our work sheds insights on the SOT material optimization and the comprehension of magnetization switching dynamics induced by SOT.
Highlights
Manipulation of magnetization states is the central topic of magnetoresistive random-access memory (MRAM) that emerges as a promising solution to the power dissipation issue in the post Moore era [1,2,3,4,5]
One approach is to apply a vertical current into a magnetic tunnel junction (MTJ), the MRAM cell
This current is polarized by the pinned ferromagnetic layer, exerting spin-transfer torque (STT) to switch the magnetization of the free layer [6,7,8]
Summary
Manipulation of magnetization states is the central topic of magnetoresistive random-access memory (MRAM) that emerges as a promising solution to the power dissipation issue in the post Moore era [1,2,3,4,5]. Broad attention has been focused on using spin-polarized currents, rather than magnetic fields, to deliver spin angular momentum to ferromagnets and induce bidirectional magnetization switching because of its potential to realize ultradense and energy-efficient memories [3]. One approach is to apply a vertical current into a magnetic tunnel junction (MTJ), the MRAM cell. This current is polarized by the pinned ferromagnetic layer, exerting spin-transfer torque (STT) to switch the magnetization of the free layer [6,7,8].
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