Abstract
This study of semiconductor laser structure works on reducing the value of the threshold current density to improve the working conditions of the laser device. In this paper shown that the threshold current density and Optical confinement factor Г depends on Barrier width (B), and Number of well (Nw). We found any increase in Barrier width and Number of well is enhanced important parameters of diode laser such as threshold current density and confinement factor that's clearly for (Nw=2, B=40 nm) then (Г=0.175, ), while for (Nw=2, B=60 nm), that give results are (Г=0.195, ). On the other hand, when changing Nw=3, the results become for (B=40 nm and B=60 nm), as follows (Г=0.275, and (Г=0.295, respectively. This investigated contributed to calculating the efficiency and work of the laser device. We found the value of slope efficiency equal (45 %) and the external quantum efficiency ( 50 %).
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