Abstract
Measurements of the temperature dependence of threshold current using both short pulse and CW excitation of GaAs heterostructure lasers with multiquantum well and conventional active layers are presented. Our results show that the carrier density at threshold is weakly temperature-dependent in both types of lasers. This is consistent with the measured carrier lifetime at threshold.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have