Abstract
In this study, a 3D structured CMOS image sensor that can process signals pixelwise in parallel is investigated as a means to simultaneously increase the pixel count and frame rate. To enhance sensor performance beyond current technologies, higher integration via multilayer stacking is essential. We developed a multilayering technique based on repetitive Au electrode embedding, direct bonding, and Si substrate removal processes. To this end, we fabricated a three-layered daisy-chain test device with 6-μm-pitch Au electrodes. Experimental results show that the series of electrical interconnections exceeds 986,000 contacts with an Au contact resistance of ~92.8 mΩ for a single connection.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
