Abstract
Two-photon absorption (TPA) imaging, based on a transient pump-probe measurement, has been demonstrated for characterizing the nonlinear optical properties of GaN films in three-dimensions. The use of near-infrared excitation light demonstrated the capability to probe changes in TPA inside the structure, which is closely associated with fluctuations in defect states. The TPA coefficient at 1.55 eV was evaluated to be ∼ 0.12 cm/GW for a standard GaN film. A spatial resolution better than λ/2, for an excitation wavelength of 800 nm, was achieved.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
