Three-dimensional growth rate modeling and simulation of silicon carbide thermal oxidation

Abstract

We investigate the anisotropic behavior of dry and wet thermal oxidation of silicon carbide for which a high-accuracy three-dimensional simulation model is entirely missing. To bridge this gap, we propose a direction dependent interpolation method for computing oxidation growth rates for three-dimensional problems. We use our method together with available one-dimensional oxidation models to simulate three-dimensional crystal orientation dependent 4H- and 6H-SiC oxidation processes.