Abstract
A three-dimensional simulation approach for the investigation of carbon nanotube field effect transistors (CNTFETs) is presented, based on the self-consistent solution of the 3D Poisson-Schrodinger equation with open boundary conditions, within the non-equilibrium Green's function formalism. This approach enables accurate simulations of transport through ballistic CNTFETs for generic device structures, eliminating the use of ideal geometries, such as coaxial devices, often used in order to simplify the electrostatics of the device.
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