Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse

Abstract

A three-transistor (3-T) cell CMOS one-time programmable (OTP) ROM array using CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high-voltage blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed structure can be a viable technology option of high-density CMOS OTP ROM array for modern digital as well as analog circuits.