Abstract
Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.
Highlights
We propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor
In this work we propose the use of p/n/p structures instead, that exhibit the same limiting efficiency that a dualjunction solar cell, but without the need of using tunnel junctions or wafer bonding schemes for interconnecting the cells
Three- or moreterminal solar cell structures have been proposed in the past, but consisted either in a mechanical stack of single-gap solar cells[8] or included a doped semiconductor layer to interconnect the solar cells in a (n/p)–p–(n/p)[9] or (n/p)–p–(p/n)[10] configuration
Summary
For the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor.
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