Abstract
Cu-poor Cu(In,Ga)S 2 films have been prepared by three-stage sequential evaporation ((In,Ga)–S/Cu–S/(In,Ga)–S) on Mo covered soda-lime glass without Na control. The depth profiles of O and Na in the grown films were investigated by secondary ion mass spectroscopy (SIMS). It has been found that the O-concentration was constant in the bulk, and decreased close to the surface comparable to the case of the two-stage process. The observed depth profile of Na resembles that of O. The efficiencies of solar cells from the O 2-annealed Cu-rich Cu(In,Ga)S 2 films did not increase, but the efficiencies of some solar cells prepared from Cu-poor Cu(In,Ga)S 2 films increased when the absorber was annealed in oxygen. The best efficiency of a solar cell from our O 2-annealed Cu-poor Cu(In,Ga)S 2 films was 9.3% (no antireflection coating) without KCN treatment and Na control.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
