Three regions in the material removal rate with the increase of the concentration of abrasives slurry

Abstract

During chemical mechanical planarization polishing (CMP), with the increase of the concentration of abrasives slurry, there are three regions of material removal rate (MRR). It is a noticeable phenomenon for several wafer material, including copper, aluminum, tungsten, silicon and silicon oxide. In this paper, a new abrasion mechanism model in solid-solid contact mode of the CMP, proposed by Luo and David, is revised to explain the three regions and two transitions between these regions. Experiment data from fast polishing process (FPP) supports the prediction of material removal rate regions.