Three-Port Model of a Modern MOS Transistor in Millimeter Wave Band, Considering Distributed Effects

Abstract

Distributed nature of an MOS transistor becomes significant in high frequencies, especially in the millimeter wave band. Two types of distributed effects are encountered in an MOS transistor: the distributed effect along the transistor channel, referred as nonquasi static (NQS) effect, and the distributed effect along the gate finger. We denote the former as lateral distributed effect and the later as longitudinal distributed effect (LDE). Lateral distributed effect has been studied in many works and has been considered either accurately or approximately in the available MOS small-signal models. However, LDEs have not accurately been accounted for, except for few works in which an MOS transistor has been analyzed using transmission line approach to derive two-port ${Y}$ parameters of the transistor. Unfortunately, the two-port distributed model is not useful when the transistor is used in common gate, common drain, or cascode configurations. In this paper, we have developed a new three-port distributed model of an MOS transistor to accurately capture the LDEs. Furthermore, the proposed model can be used in conjunction with new Berkeley short-channel IGFET model (BSIM) radio frequency (RF) small-signal models, such as BSIM4.7 and BSIM6. To evaluate the proposed model, we have used Taiwan Semiconductor Manufacturing Company 90 nm RF-CMOS technology parameters. Our results show that LDE is considerably more significant than NQS effect in millimeter wave band, in the case of a short channel MOS transistor with long gate finger. This reveals the importance of LDEs in RF MOS transistor models, especially in millimeter wave band applications.