Abstract
A method for low-dose-rate MOS device response prediction based on the linear dependence between positive oxide charge anneal and interface states build-up is presented and experimentally verified. A linear relationship is seen to exist between the build-up of slow interface states and oxide trapped hole annealing. The physical explanation of the correlation between the number of trapped holes annealed and the number of interface states generated can be given in both hydrogen and trapped hole conversion models on a phenomenological basis. It is suggested that there is a one-to-K/sub Oi/ relationship (where K/sub Oi/ is some phenomenological constant) between the number of trapped holes annealed and the number of interface states generated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.