Abstract
GaAs CCD's with 5-µm electrodes were fabricated using a process fully compatible to MESFET integrated circuits. The devices were operated at clock frequencies from 100 kHz to 100 MHz. The transfer inefficiency was found to be ≈ 1 × 10-2in the frequency range from 100 kHz to 30 MHz. This is due to an incomplete charge transfer caused by interelectrode gaps larger than the layer thickness.
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