Abstract
AbstractA core issue in concentrator photovoltaic technology (CPV) is the resistive losses in cells that usually limits the maximum photoconversion efficiency under high concentration. We propose the use of three‐junction monolithic interconnected modules (MIM) to mitigate resistive losses by providing high‐voltage low‐current power. First, we present the fabrication of InGaP/InGaAs/Ge front‐contacted microcells with various designs and dimensions. Front‐contacted cells are the key enabler for the MIM fabrication and demonstrate good electrical characteristics under one sun, similar to standard‐contacted cells. The base front contact size is minimized to limit the unutilized area on the wafer. Second, fabrication techniques for interconnecting cells in MIM are described. Finally, electrical measurements show a record conversion efficiency of 35.1% under 798 suns for the first three‐junction MIM reported (17.8% when considering the entire device area). Versatility and further optimization of the devices are discussed to enlarge their field of application.
Highlights
Concentrator photovoltaic (CPV) cells and modules under high-power illumination are typically limited in efficiency because of resistive losses
We have demonstrated the fabrication of front-contacted cells with similar performance to conventional cells
We have shown that monolithic interconnected modules (MIM) are well suited for highconcentration applications, when the high current of conventional cells would reduce the efficiency because of resistive losses
Summary
Concentrator photovoltaic (CPV) cells and modules under high-power illumination are typically limited in efficiency because of resistive losses. Both micrometre-scale high-efficiency solar cells and cells with both contacts on the rear surface or on the front surface are required and were investigated.[2,3,4] Another approach to limit resistive losses relies on the use of monolithic interconnected modules (MIM). In these images, active area varies from 0.044 mm[2] (circular design) to 0.347 mm[2] (hexagonal design). The first step consists in the electrical isolation between the cells and limits the topography between electrical contacts (Figure 4B) For this purpose, we use an epoxy-based and photosensitive material (SU-8), commonly employed in the microelectronics industry, to completely fill the singulation trenches.
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