Three‐Input Magnetic Logic Gates Using Magnetic Vortex Transistor

Abstract

Compared to the present‐day semiconductor technology in logic gates, which uses the transport properties of electrons, the magnetic analog of logic gates using magnetic vortices has proven to be advantageous in many ways due to its efficiency in terms of negligible electron power leakage and higher switching speed. Based on the asymmetric magnetic vortex transistor (AMVT), a 3‐input OR gate and a majority gate using micromagnetic simulations are demonstrated. Depending on the distances between the three‐input units and the input–output unit and the polarities of the magnetic vortices of the output unit, the networks behave as logic gates. Considering AMVT as one unit, three such units are placed parallel to the input side and another on the output side. Spin‐polarized current is applied to the input units, and the energy is transferred to the output unit owing to the movement of antivortex solitons through the magnetic stray field distribution. Energy transfer is recorded from the output unit, and any energy amplification is considered an ON (1) state, whereas a reduction in energy is considered an OFF (0) state. These “magnetic” logic gate configurations using magnetic vortices can thus behave as fundamental blocks of “magnetic” integrated circuits in the future.