Abstract
Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) is one of the high-efficiency technologies for controlling the preparation of regular vertical graphene and has gained increased attention in recent years. Combined with the current development, the three elements of carbon source/carrier gas/substrate are reviewed for the preparation of vertical graphene by RF-PECVD. The selection and control of carbon source/carrier gas (reactive gas/protective gas/doping gas), the conditions required for preparation, and different growth substrates used by RF-PECVD technology are summarized to provide guidance for further screening of preparation elements. Results reveal the effects of preparation elements on the final application direction of vertical graphene and the important influence of control parameters in various application fields on the final performance of the vertical graphene material. In addition, the growth mechanism of vertical graphene is discussed under the premise of the existing RF-PECVD technology. The challenges and future perspectives are also highlighted to promote the preparation of vertical graphene by radio frequency method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
