Abstract
The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (VDD) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.
Highlights
In view of the inherent advantages of the direct wide bandgap energy and the high radiation hardness, the transparent metal oxide materials were widely used in electronic devices[1,2], optoelectronic devices[3,4], and sensors[5,6]
The n-type thin-film transistors (TFTs) and the p-type TFTs worked as the driver and the load, respectively
When the inverter operated at the VDD of 10 V and the input voltage from 0 V to 10 V, the performances of unskewed inverter were resulted
Summary
In view of the inherent advantages of the direct wide bandgap energy and the high radiation hardness, the transparent metal oxide materials were widely used in electronic devices[1,2], optoelectronic devices[3,4], and sensors[5,6]. The three-dimensionally stacked n-type a-In-Ga-Zn-O and p-type poly(9,9-dioctylfluorene-co-bithiophene) complementary thin-film transistor was reported[17]. Since the nickel oxide (NiO) thin films exhibit transparent p-type properties and have high bandgap energy from 3.6 eV to 4.0 eV, they have been used in organic and dye-sensitized solar cells[18], organic light-emitting diodes[19], and electrochemical devices[20]. Because the aluminum-doped zinc oxide (Al:ZnO) thin films exhibit transparent n-type properties and have high bandgap energy from 3.2 eV to 3.6 eV, they have been used in transparent electrodes[21], electrooptical devices[22], and electronic devices[23]. The complementary thin-film transistors (CTFTs) were constructed by p-type TFTs and n-type TFTs fabricated using the NiO channel layer and the Al:ZnO channel layer, respectively. To minimize the device area, the three-dimensional stacked structure of the CTFTs was proposed and applied as inverters
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