Abstract
A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution. The advanced level set method is implemented to simulate the time-related movements of etched surface. In the meanwhile, accelerated by ray tracing algorithm, the Monte Carlo method incorporates all dominant physical and chemical mechanisms such as ion-enhanced etching, ballistic transport, ion scattering, and sidewall passivation. The modified models of charged particles and neutral particles are epitomized to determine the contributions of etching rate. The effects such as scalloping effect and lag effect are investigated in simulations and experiments. Besides, the quantitative analyses are conducted to measure the simulation error. Finally, this simulator will be served as an accurate prediction tool for some MEMS fabrications.
Highlights
For the fabrication of high aspect ratio MEMS structures, chemical etching, and plasma sputtering are not chosen due to the isotropic characterization and bad selectivity
The simulation surface profiles are described by narrow band level set method [3,4]
The simulate the Silicon-on-Insulator (SOI) deep reactive ion etching (DRIE) process, which can be applied to fabricate the simulation results are not identical compared with the geometric level set model, which corresponds combtoactuators, accelerometer, and piezoelectric structures
Summary
For the fabrication of high aspect ratio MEMS structures, chemical etching, and plasma sputtering are not chosen due to the isotropic characterization and bad selectivity. The other hand, the selective etching ratio, such as the substrate-mask etching ratio, can be simulated by extracting the parameters in different materials. It can simulator which adds a Monte Carlo particle simulation has three advantages. The simulate the Silicon-on-Insulator (SOI) DRIE process, which can be applied to fabricate the simulation results are not identical compared with the geometric level set model, which corresponds combtoactuators, accelerometer, and piezoelectric structures. Substrate-mask etching ratio, can be simulated by extracting the parameters in different materials It can simulate the Silicon-on-Insulator (SOI) DRIE process, which can be applied to.
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