Three-dimensional simulation model of switching dynamics in phase change random access memory cells

Abstract

Switching dynamics associated with reset and set operations of vertical phase change random access memory (PCRAM) cells are studied using a three-dimensional simulation model. Based on a finite difference method, the numerical algorithm simulates the electrical, thermal, and phase change dynamics in the PCRAM device during switching operations taking into account electrical and thermal percolation characteristics of the phase change material. Toward a better understanding of switching operations and the optimization of cell designs, the obtained simulation results provide unprecedented insight into temporally and spatially resolved kinetics of device temperature, current densities, and phase transitions. Threshold conditions for reset and set operations are identified in close agreement to existing experimental data, and the scaling ability of the investigated vertical PCRAM cell design to a minimum feature size of at least 40 nm is demonstrated.