Abstract
We present a rigorous, three-dimensional model for the simulation of resist exposure and development. The development simulation is based on a cellular surface movement algorithm and benchmarked for several prototypical test cases. Exposure simulation is performed by an extension of the two-dimensional differential method to three dimensions. This method relies on a Fourier expansion of the electromagnetic (EM) field in the lateral coordinates. We demonstrate simulation examples for exposure and development over a planar substrate, a dielectric and a reflective step.
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