Three-dimensional photonic crystals operating at optical wavelength region

Abstract

Three-dimensional photonic crystals operating at optical wavelength region are developed with III–V semiconductors, where micron-to-submicron-scale large-contrast refractive index change with an asymmetric face-centered cubic structure is formed by a method based on a wafer fusion and a very precise alignment technique. A considerable band-gap effect is successfully demonstrated in infrared-to-near-infrared wavelengths. It is pointed out for this method that the introduction of arbitrary defects states and/or efficient light emitters can be possible. For the example of the introduction of light-emitting element, a surface-emitting laser with a two-dimensional photonic crystal structure is developed, and very unique lasing characteristics are demonstrated. These results encourage us for the development of various quantum optical devices and circuits including not only passive but also active devices. Some ultra-small optical integrated circuits are proposed, and a guideline for the design of photonic crystal waveguides is successfully demonstrated.