Abstract
A three-dimensional modeling study of a polycrystalline silicon mono-facet photocell under multi-spectral illumination is presented highlighting the effect of irradiation energy (Φ) and damage coefficient (Kl) on the macroscopic parameters. Using the junction recombination rate Sf and the backside recombination rate (Sb) in a 3D modeling study, the continuity equation is solved. We determined the current density the current density and the photovoltage. This study takes into account the irradiation energy and the damage coefficient on the quality of the polycrystalline silicon photocell.
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