Abstract
Single, double and triple-layer test structures were measured by time of flight (TOF) Rutherford backscattering spectrometry (RBS) for checking the sensitivity and resolution. A single-layer nanostructure with Au stripes on a Si substrate was resolved by TOF-RBS measurement within a short time of 256s. The spatial resolution, measured by the edge of the Au stripes, was 42nm. Another single-layer nanostructure with Pt stripes fabricated by electron beam (EB) induced deposition on a Si substrate was resolved by TOF-RBS measurement even at a thickness of Pt stripes less than one mono-layer. Ga embedded layers implanted by a focused ion beam under the Pt stripes fabricated by EB induced deposition on a Si substrate could be detected for a double-layer nanostructure. Furthermore, a triple-layer nanostructure with two Pt stripe layers isolated by a SiO2 layer fabricated by EB induced deposition on a Si substrate could be resolved and cross-sections shown.
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