Abstract
We demonstrate three-dimensional localization of a single nitrogen-vacancy (NV) center in diamond by combining nitrogen doping during growth with a post-growth 12C implantation technique that facilitates vacancy formation in the crystal. We show that the NV density can be controlled by the implantation dose without necessitating increase of the nitrogen incorporation. By implanting a large 12C dose through nanoscale apertures, we can localize an individual NV center within a volume of (∼180 nm)3 at a deterministic position while repeatedly preserving a coherence time (T2) > 300 μs. This deterministic position control of coherent NV centers enables integration into NV-based nanostructures to realize scalable spin-sensing devices as well as coherent spin coupling mediated by photons and phonons.
Highlights
We demonstrate three-dimensional localization of a single nitrogen-vacancy (NV) center in diamond by combining nitrogen doping during growth with a post-growth 12C implantation technique that facilitates vacancy formation in the crystal
We show that the NV density can be controlled by the implantation dose without necessitating increase of the nitrogen incorporation
In this Letter, we demonstrate a method of vacancy engineering that allows for the tunability and localization of the NV density
Summary
We demonstrate three-dimensional localization of a single nitrogen-vacancy (NV) center in diamond by combining nitrogen doping during growth with a post-growth 12C implantation technique that facilitates vacancy formation in the crystal.
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