Abstract
The aberration-corrected scanning transmission electron microscope allows probes to be formed with less than 1-Å diameter, providing sufficient sensitivity to observe individual Hf atoms within the SiO2 passivating layer of a HfO2∕SiO2∕Si alternative gate dielectric stack. Furthermore, the depth resolution is sufficient to localize the atom positions to half-nanometer precision in the third dimension. From a through-focal series of images, we demonstrate a three-dimensional reconstruction of the Hf atom sites, representing a three-dimensional map of potential breakdown sites within the gate dielectric.
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