Abstract
Herein, a simple and novel method was used to synthesize a new structure of graphene which can be called hollow graphene. First, the ZnO-Graphene QDs synthesized by solution method and then ZnO QDs were dissolved from this structure using an acidic solution to obtain hollow structure of graphene. Afterward, this structure was used in PbS QDs solar cell in order to improve the transport of electron and decrease the recombination of the carriers. A power conversion efficiency of 5.3% was obtained using hollow graphene as a fast electron extraction layer due to the enhancement of EQE and current density. The improvement of PCE in this device was corresponded to efficient photosensitized electron injection from the conduction band of PbS QDs to the LUMO levels of hollow graphene and slow carriers recombination.
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