Three-dimensional fabrication on GaAs surfaces using electron-beam-induced carbondeposition followed by wet chemical etching

Abstract

We propose a method for fabricating three-dimensional structures on GaAs surfaces usingelectron beam (EB) irradiation followed by wet chemical etching. An etch-resistanthydrocarbon layer forms on the GaAs surface with the EB irradiation. Structures can befabricated after etching using the hydrocarbon layer to block the etching. The heightdependence on the irradiation and etching conditions was investigated as a means ofcontrolling the height of the structures. A higher structure was fabricated at higher doses.The etching selectivity changed with the concentration of the etchant. A three-dimensionalstructure was fabricated based on these results, demonstrating the possible use ofthis method as a novel three-dimensional fabrication method for GaAs surfaces.