Abstract
AbstractFor the integration of ambient energy sources into implantable/wearable microelectronics, the development of efficient and high‐power energy storage devices is essential (such as electrostatic or dielectric capacitors). In light of the general need for small components for energy storage devices, the development of fluorite‐based three‐dimensional structured electrostatic capacitors is expected to open new paths for the future development of on‐chip energy storage, especially because of their enhanced capacity at low deposition thicknesses (in nanometers).
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