Abstract
A new 3D cellular automata-lattice Boltzmann method (CA-LBM) coupling model is proposed to simulate the formation of facet and facet dendrites in directional solidification. In this model, the CA method is used to simulate the crystal growth process and the LBM method is used to simulate the physical field in the calculation area. A new three-dimensional anisotropic function is introduced, and the model is modified by interpolation and neighborhood restriction. We add the remelting calculation model. The interaction between interface energy anisotropy and dynamic anisotropy is solved reasonably. The growth process and morphology of small plane and small plane dendrites were simulated.
Highlights
At present, the polycrystalline silicon produced by directional solidification is still the main material of photoelectric conversion for solar cells
Because the Jacson factor of Si is greater than 2.0 [6], the growth interface shows significant facet characteristics, so the phase field (PF) method used to calculate the growth of silicon crystal is different from the PF method of non-facet crystal represented by metal
In order to study the effect of three-dimensional interfacial free energy anisotropy on the growth of silicon crystal, the values of interfacial energy anisotropy with different strength were calculated
Summary
The polycrystalline silicon produced by directional solidification is still the main material of photoelectric conversion for solar cells. It is of great significance to improve the quality of polysilicon and the production efficiency of polysilicon by using numerical simulation to guide the formulation of the main process parameters of polysilicon directional solidification. Since 2001, scholars have used numerical methods to calculate the temperature field and flow field of directional solidification of polysilicon, effectively guiding the actual production of polysilicon [1,2,3,4,5]. The numerical methods used to simulate crystal growth mainly focus on phase field method and cellular automaton. Because the Jacson factor of Si is greater than 2.0 [6], the growth interface shows significant facet characteristics, so the phase field (PF) method used to calculate the growth of silicon crystal is different from the PF method of non-facet crystal represented by metal
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