Abstract
Laser diodes with current threshold as low as 16 mA for lasers of 300 μm length and channel width of 2-3 μm were obtained with operational wavelength of 1.51 μm. These lasers are fabricated with one liquid-phase-epitaxy growth step and a lateral zinc diffusion process. Current confinement is achieved by use of the semi-insulating substrate material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
