Abstract
In this paper, we report the transport properties of an InAsSb quantum well channel double heterostructure. We propose a structure of the InAsSb quantum well with an AlInSb/AlInSb double matrix barrier. The quantum well is investigated for an Al x In1−x Sb/Al0.24In0.76Sb/In y As1−y Sb/Al0.24In0.76Sb composition over a variable interpolation range (y = 0–0.3) of the InAsSb channel region. With the smallest threading density of 1.4 × 108 cm−2 and the highest electron mobility of 43000 cm2/Vs at 15 nm quantum well thickness, a small lattice mismatch is shown between the double matrix AlInSb barrier and the InAsSb channel. This is the lowest threading dislocation density and the highest mobility among those reported for all InSb-based heterostructure devices. This device is further proven to be defec-free due to better lattice match with the InAsSb channel quantum well. Therefore, this device could be used for a wide range of ultra-low power applications. Open image in new window
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