Abstract
CuO thin films were prepared by radio frequency magnetron sputtering using a copper target in a (Ar + O2) reactive mixture. Different sputtering parameters were varied including oxygen flow rate, total pressure, target-substrate distance, substrate temperature and target orientation. As expected, the thin film chemical composition is strongly dependent on the oxygen flow rate. CuO thin films having a good electronic conductivity (9.3 × 10(-1) S·cm(-1)) were obtained with an oxygen concentration of 12%. The texture and the columnar growth are amplified when the target is tilted. Preliminary electrochemical results highlight that CuO thin film performances in lithium systems are tightly related to their morphology and structure.
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