Abstract
We apply the Thomas-Fermi theory to the problem of dielectric screening in a semiconductor when the external perturbation is given by an extended charge distribution. We introduce a boundary condition on the electric field at the origin. This is in contrast with the condition on the potential imposed by Resta in his original analysis of a point-charge perturbation. We then proceed to study three typical examples of external pseudopotentials and their associated pseudocharge distributions. The corresponding linearized Thomas-Fermi equations are solved both analytically and numerically. The exact nonlinear Thomas-Fermi equations are then solved numerically and compared with the linear results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
