Third-order intercepts and nonlinear distortion level investigation for pre and post multilayer pHEMTs

Abstract

Investigation of the third-order intercept point, IP3 and nonlinear distortion level, NDL for pre-and post-multilayer processed GaAs pHEMTs has been accomplished by employing two-tone intermodulation distortion measurements. The third-order intercept point is a biasing, input power, frequency-dependent term, particularly related to the fundamental and third-order intermodulation distortion component and the study extended from low to high temperatures. The main findings are that the output referenced OIP3 decreased while the input referenced IIP3 increased with frequency at peak transconductance condition and the study further extended to multi-bias operation condition. Within the measured temperature range, the IP3 and NDL modified significantly following the behaviour of IMD3 distortion. This investigation of IP3 is utilized to measure how much distortion is created and referring this to the antenna input gives a straightforward strategy to decide whether or not the spec can be met. On the other hand, analysis of NDL is vital for choosing the most excellent biasing alternative with the entryway measurements of the device to create a compromise agreeing to the desired utilization.