Abstract
We demonstrate the use of third harmonic generation as a probe of the bulk symmetry properties of semiconductors. Using 20 ns, 1.06 μm laser pulses we have applied this probe to structural diagnostics of (100) annealed and unannealed Si wafers implanted with boron and arsenic ions at dosages above and below the threshold for amorphization. The presence of free carriers with densities up to 1021 cm−3 is found to increase the intensity but not alter the symmetry characteristics of the third harmonic light; the enhancement in the light level is attributed to a change in the reflectivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
