Abstract
The third generation <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BE</sup> SOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) on UTBB (Ultra-Thin Body and Buried Oxide) was fabricated, analyzed and compared to the <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BE</sup> SOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces for UTBB <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BE</sup> SOI devices improves most of the parameters analyzed. Its higher drain current (67%), maximum transconductance (122%) and body factor (217%) with seven times lower back gate bias make the UTBB <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BE</sup> SOI MOSFET more compatible with standard SOI CMOS (Complementary MOS) technology than the <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BE</sup> SOI with thick buried oxide.
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