Thin-film transistors fabricated in solid-phase-recrystallized Si films on fused silica substrates

Abstract

Solid-phase recrystallization of Si films prepared by chemical vapor deposition on fused silica substrates has been accomplished by transient heating on a graphite strip heater. This process increases the grain size from ∼50 nm to ∼1 μm. Thin-film transistors fabricated in the recrystallized films exhibit surface electron mobilities of 15–20 cm2/V s and on:off current ratios in excess of 105 for a voltage swing of 10 V.