Thin-film solar cells with InGaAs/GaAsP multiple quantum wells and a rear surface etched with light trapping micro-hole array

Abstract

A light trapping effect in GaAs p–i–n solar cells with InGaAs/GaAsP multiple quantum wells (MQWs) in the i-layer was demonstrated by applying a light scattering texture to the rear surface of the cell. A thin-film MQW solar cell was successfully fabricated by metal organic vapor phase epitaxy (MOVPE) to grow an inverted n–i–p photovoltaic (PV) structure; this structure was then transferred to a Si support substrate to prevent optical loss due to free carrier absorption. For the light scattering texture, the use of both the wet-etched micro-hole arrayed SiO2 dielectric layer on the rear surface of the cell and the secondarily etched micro hole array on the GaAs layer was attempted. On the SiO2 layer, the micro hole array pattern was obtained by the radio frequency sputtering of the layer followed by wet etching with photolithographic patterning. On the GaAs layer, the micro-hole array pattern was obtained by direct etching through a SiO2 template. Compared with the light scattering effects of the micro-hole-arrayed SiO2 layer, the secondarily etched GaAs rear contact layer showed a significant improvement in external quantum efficiency (EQE) in the wavelength range from 855 to 1000 nm that corresponds to the photon absorption wavelength in MQWs.