Abstract
We tried to realize thin-film devices as an application of double-layered polycrystalline silicon (poly-Si) films formed by green laser annealing (GLA). We investigated the dependence of the quality of double-layered poly-Si films formed by GLA on laser irradiation energy. Simultaneous crystallization of double-layered Si films was achieved. The grain size of the upper poly-Si layer and the crystalline quality of the lower poly-Si layer are improved by optimization of laser energy density. Moreover, the thin-film transistors (TFTs) and thin-film photodiodes (TFPDs) fabricated on the upper and lower poly-Si films in a single process have shown clear device operations. The optimization of laser energy density in GLA improves the quality of the upper and lower poly-Si films leading to the enhancement of the performance of TFTs and TFPDs.
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