Thin-film Deposition of Silicon Nitrides and Oxides from Trihydridosilanes

Abstract

Trihydridosilanes can provide a route for generating self-assembled monolayers on metal substrates. Under mild conditions, these precursors interact with a variety of clean, hydrogenated and fresh metal and metalloid surfaces, including titanium, silicon and gold. All classes of hydridosilanes have minimal interaction with anhydrous oxide surfaces. After initial deposition, SAMs formed from 2-chloroethyltrihydridosilanes may be converted to silicon nitride by pulsing with ammonia or silicon dioxide by pulsing water or oxygen. A proposed mechanism for the initial steps of deposition involves the dissociative adsorption of the silanes with the formation of hydrogen, followed by topmost atom layer insertion and concomitant surface reconstruction