Abstract
The development of adhesives that enable handling, processing, and assembly of thin wafers and die is a key technical challenge for the realization of 3D devices. We will present on temporary adhesive technology for processing of thinned wafers that is amenable to either mechanical or laser-assisted debonding that can occur at room temperature. Temporary wafer bonding has emerged as the method of choice for handling silicon wafers during the thinning and high-temperature backside processing required for the manufacture of 3D device structures. Among the requirements for temporary wafer bonding materials to be used in high volume manufacturing are simple device and carrier wafer preparation, high-throughput wafer bonding, thermal stability to 300 °C or higher, and clean room-temperature release directly from the device wafer using either mechanical or laser-assisted debonding We will present successful temporary wafer bonding using a BCB (benzocyclobutene)-based material that can meet these requirements. The mode of adhesive release from a device wafer will be discussed in detail as it relates to wafer thinning and handling, and material physical properties and resistances will be expressed. Formulation requirements needed for successful debonding will be presented, with an emphasis on a laser-debonding scheme that utilizes either a 248nm or 308nm laser source capable of ablating a laser sensitive layer residing between a glass carrier and the temporary wafer bonding material. Successful room temperature tape-peeling of the adhesive film after ablation and carrier removal will be discussed.
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More From: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)
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