Abstract
High tunneling current and large resistance against stress were the main issue of tunnel oxide for scaling down the operation voltage of EEPROMs. In this letter, thin-tunnel oxides grown on a CF/sub 4/ pretreated silicon substrate were prepared and investigated for the first time. The fabricated oxide has about three orders of tunneling current higher than that of control one; furthermore, the stress induced anomalous and low electric field leakage currents were greatly suppressed. The improvement could be contributed to F-incorporation in oxide. This type of oxide is suitable for fabricating low-voltage EEPROMs and less process complexity was added.
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